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Electrical switching of photoluminescence of single site-controlled InAs quantum dots

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Details

Original languageEnglish
Pages (from-to)1240-1242
Number of pages3
JournalElectronics Letters
Volume52
Issue number14
DOIs
Publication statusPublished - 7 Jul 2016
Publication typeA1 Journal article-refereed

Abstract

Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.