Electrical switching of photoluminescence of single site-controlled InAs quantum dots
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 1240-1242 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 52 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 7 Jul 2016 |
| Publication type | A1 Journal article-refereed |
Abstract
Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.