Electrical switching of photoluminescence of single site-controlled InAs quantum dots
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||3|
|Publication status||Published - 7 Jul 2016|
|Publication type||A1 Journal article-refereed|
Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.