Enhancement of EQE for MBE grown InAs/GaAs Quantum Dot Solar Cell with Back Reflector
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Title of host publication | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) |
| Publisher | IEEE |
| Publication status | Accepted/In press - 2019 |
| Publication type | A4 Article in a conference publication |
| Event | 46th IEEE Photovoltaic Specialists Conference (PVSC 46) JUNE 16-21, 2019 CHICAGO, IL - Chicago USA, Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 Conference number: 46 https://www.ieee-pvsc.org/PVSC46/ |
Conference
| Conference | 46th IEEE Photovoltaic Specialists Conference (PVSC 46) JUNE 16-21, 2019 CHICAGO, IL |
|---|---|
| Country | United States |
| City | Chicago |
| Period | 16/06/19 → 21/06/19 |
| Internet address |
Abstract
We report on molecular beam epitaxy grown InAs/GaAs quantum dot solar cells incorporating thin-film configuration with back surface reflectors. External quantum efficiency measurements reveal two times higher current generation for the quantum dots with the thin-film solar cell with the back reflector compared to a standard reference solar cell without back reflector. A high open-circuit voltage of 0.884 V is demonstrated. Furthermore, the benefits of using more advanced designs for a back reflector employing pyramidal diffraction gratings are discussed.
ASJC Scopus subject areas
Keywords
- Solar Cell, Semiconducting III-V Materials