Enhancement of EQE for MBE grown InAs/GaAs Quantum Dot Solar Cell with Back Reflector
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Title of host publication | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) |
| Publisher | IEEE |
| Pages | 2593-2596 |
| Number of pages | 4 |
| ISBN (Electronic) | 978-1-7281-0494-2 |
| DOIs | |
| Publication status | Published - 2020 |
| Publication type | A4 Article in a conference publication |
| Event | IEEE Photovoltaic Specialists Conference - Duration: 1 Jan 1900 → … |
Publication series
| Name | Conference record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Conference
| Conference | IEEE Photovoltaic Specialists Conference |
|---|---|
| Period | 1/01/00 → … |
Abstract
We report on molecular beam epitaxy grown InAs/GaAs quantum dot solar cells incorporating thin-film configuration with back surface reflectors. External quantum efficiency measurements reveal two times higher current generation for the quantum dots with the thin-film solar cell with the back reflector compared to a standard reference solar cell without back reflector. A high open-circuit voltage of 0.884 V is demonstrated. Furthermore, the benefits of using more advanced designs for a back reflector employing pyramidal diffraction gratings are discussed.
ASJC Scopus subject areas
Keywords
- Solar Cell, Semiconducting III-V Materials