Enhancement of EQE for MBE grown InAs/GaAs Quantum Dot Solar Cell with Back Reflector
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Details
Original language | English |
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Title of host publication | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) |
Publisher | IEEE |
Pages | 2593-2596 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-7281-0494-2 |
DOIs | |
Publication status | Published - 2020 |
Publication type | A4 Article in a conference publication |
Event | IEEE Photovoltaic Specialists Conference - Duration: 1 Jan 1900 → … |
Publication series
Name | Conference record of the IEEE Photovoltaic Specialists Conference |
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ISSN (Print) | 0160-8371 |
Conference
Conference | IEEE Photovoltaic Specialists Conference |
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Period | 1/01/00 → … |
Abstract
We report on molecular beam epitaxy grown InAs/GaAs quantum dot solar cells incorporating thin-film configuration with back surface reflectors. External quantum efficiency measurements reveal two times higher current generation for the quantum dots with the thin-film solar cell with the back reflector compared to a standard reference solar cell without back reflector. A high open-circuit voltage of 0.884 V is demonstrated. Furthermore, the benefits of using more advanced designs for a back reflector employing pyramidal diffraction gratings are discussed.
ASJC Scopus subject areas
Keywords
- Solar Cell, Semiconducting III-V Materials