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Enhancement of EQE for MBE grown InAs/GaAs Quantum Dot Solar Cell with Back Reflector

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
PublisherIEEE
Pages2593-2596
Number of pages4
ISBN (Electronic)978-1-7281-0494-2
DOIs
Publication statusPublished - 2020
Publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference -
Duration: 1 Jan 1900 → …

Publication series

NameConference record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
Period1/01/00 → …

Abstract

We report on molecular beam epitaxy grown InAs/GaAs quantum dot solar cells incorporating thin-film configuration with back surface reflectors. External quantum efficiency measurements reveal two times higher current generation for the quantum dots with the thin-film solar cell with the back reflector compared to a standard reference solar cell without back reflector. A high open-circuit voltage of 0.884 V is demonstrated. Furthermore, the benefits of using more advanced designs for a back reflector employing pyramidal diffraction gratings are discussed.

Keywords

  • Solar Cell, Semiconducting III-V Materials

Publication forum classification