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Enhancement of EQE for MBE grown InAs/GaAs Quantum Dot Solar Cell with Back Reflector

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
PublisherIEEE
Publication statusAccepted/In press - 2019
Publication typeA4 Article in a conference publication
Event46th IEEE Photovoltaic Specialists Conference (PVSC 46)
JUNE 16-21, 2019
CHICAGO, IL
- Chicago USA, Chicago, United States
Duration: 16 Jun 201921 Jun 2019
Conference number: 46
https://www.ieee-pvsc.org/PVSC46/

Conference

Conference46th IEEE Photovoltaic Specialists Conference (PVSC 46)
JUNE 16-21, 2019
CHICAGO, IL
CountryUnited States
CityChicago
Period16/06/1921/06/19
Internet address

Abstract

We report on molecular beam epitaxy grown InAs/GaAs quantum dot solar cells incorporating thin-film configuration with back surface reflectors. External quantum efficiency measurements reveal two times higher current generation for the quantum dots with the thin-film solar cell with the back reflector compared to a standard reference solar cell without back reflector. A high open-circuit voltage of 0.884 V is demonstrated. Furthermore, the benefits of using more advanced designs for a back reflector employing pyramidal diffraction gratings are discussed.

Keywords

  • Solar Cell, Semiconducting III-V Materials

Publication forum classification