Epitaxial growth of fcc clusters
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||4|
|Journal||Physical Review B|
|Publication status||Published - 1 Jan 1995|
|Publication type||Not Eligible|
The statistics of epitaxially grown free fcc clusters is studied in a simple growth model, where the clusters have only (111) surfaces, and only one facet grows at a time. The abundance spectrum shows regular oscillations as a function of N1/3 and as a function of N2/3. The former corresponds to octahedral growth pattern, although only an insignificant number of the clusters are perfect octahedra. The latter is a result of the differences in the facet sizes of imperfect octahedra.