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Epitaxial growth of fcc clusters

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Details

Original languageEnglish
Pages (from-to)11039-11042
Number of pages4
JournalPhysical Review B
Volume51
Issue number16
DOIs
Publication statusPublished - 1 Jan 1995
Externally publishedYes
Publication typeNot Eligible

Abstract

The statistics of epitaxially grown free fcc clusters is studied in a simple growth model, where the clusters have only (111) surfaces, and only one facet grows at a time. The abundance spectrum shows regular oscillations as a function of N1/3 and as a function of N2/3. The former corresponds to octahedral growth pattern, although only an insignificant number of the clusters are perfect octahedra. The latter is a result of the differences in the facet sizes of imperfect octahedra.

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