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Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
PublisherSPIE
ISBN (Electronic)9781510600034
DOIs
Publication statusPublished - 2016
Publication typeA4 Article in a conference publication
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting -
Duration: 1 Jan 2000 → …

Publication series

NameProceedings of SPIE
Volume9768
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting
Period1/01/00 → …

Abstract

Single-mode superluminescent diodes operating at 2 μm wavelength are reported. The structures are based on GaSb material systems and were fabricated by molecular beam epitaxy. Several waveguide designs have been implemented. A continuous-wave output power higher than 35 mW is demonstrated for a spectrum centered at around 1.92 μm. We show that the maximum output power of the devices is strongly linked to spectrum width. Device having low output power exhibit a wide spectrum with a full-width half-maximum (FWHM) as large as 209 nm, while devices with highest output power exhibit a narrower spectrum with about 61 nm FWHM.

Keywords

  • Gallium antimonide, SLD design, Superluminescent diodes, Tilt waveguide

Publication forum classification

Field of science, Statistics Finland

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