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Fabrication of germanium nanowire arrays by block copolymer lithography

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)782-787
Number of pages6
JournalSCIENCE OF ADVANCED MATERIALS
Volume5
Issue number7
DOIs
Publication statusPublished - 2013
Publication typeA1 Journal article-refereed

Abstract

Germanium nanowires (GeNWs) have importance in emerging device applications because of their high hole mobility. Reported here is the fabrication of GeNWs on a SiO2 insulator substrate from a phase separated lamellar PS-b-PMMA block copolymer (BCP) by a simple and reproducible method. The parent BCP film was selectively etched to remove PMMA block generating PS template which was then used to fabricate GeNWs using a thermal evaporation technique. XRD, Raman and TEM cross-section analysis reveal the formation of GeNWs on SiO2 substrates. Thermal treatment of the GeNWs was used to probe thermal stability and crystallisation properties. It was observed that thermal treatment of GeNWs resulted in red-shifts in the Raman spectra. The results demonstrate an exciting nanofabrication technique for creating high density nanowires for the nanoelectronic industry.

ASJC Scopus subject areas

Keywords

  • Etching, Germanium nanowires, PS template, PS-b-PMMA, Raman spectroscopy, Self-assembly, Thermal treatment, XRD analysis