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Field Emission from Self-Catalyzed GaAs Nanowires

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Field Emission from Self-Catalyzed GaAs Nanowires. / Giubileo, Filippo; Di Bartolomeo, Antonio; Iemmo, Laura; Luongo, Giuseppe; Passacantando, Maurizio; Koivusalo, Eero; Hakkarainen, Teemu; Guina, Mircea.

In: Nanomaterials, Vol. 7, No. 9, 275, 16.09.2017.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Giubileo, F, Di Bartolomeo, A, Iemmo, L, Luongo, G, Passacantando, M, Koivusalo, E, Hakkarainen, T & Guina, M 2017, 'Field Emission from Self-Catalyzed GaAs Nanowires', Nanomaterials, vol. 7, no. 9, 275. https://doi.org/10.3390/nano7090275

APA

Giubileo, F., Di Bartolomeo, A., Iemmo, L., Luongo, G., Passacantando, M., Koivusalo, E., ... Guina, M. (2017). Field Emission from Self-Catalyzed GaAs Nanowires. Nanomaterials, 7(9), [275]. https://doi.org/10.3390/nano7090275

Vancouver

Giubileo F, Di Bartolomeo A, Iemmo L, Luongo G, Passacantando M, Koivusalo E et al. Field Emission from Self-Catalyzed GaAs Nanowires. Nanomaterials. 2017 Sep 16;7(9). 275. https://doi.org/10.3390/nano7090275

Author

Giubileo, Filippo ; Di Bartolomeo, Antonio ; Iemmo, Laura ; Luongo, Giuseppe ; Passacantando, Maurizio ; Koivusalo, Eero ; Hakkarainen, Teemu ; Guina, Mircea. / Field Emission from Self-Catalyzed GaAs Nanowires. In: Nanomaterials. 2017 ; Vol. 7, No. 9.

Bibtex - Download

@article{ae7680bdbe9d4c6eb704c7224f9d3612,
title = "Field Emission from Self-Catalyzed GaAs Nanowires",
abstract = "We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements were taken inside a scanning electron microscope chamber with a nano-controlled tungsten tip functioning as anode. Experimental data were analyzed in the framework of the Fowler-Nordheim theory. We demonstrate stable current up to 10−7 A emitted from the tip of single nanowire, with a field enhancement factor β of up to 112 at anode-cathode distance d = 350 nm. A linear dependence of β on the anode-cathode distance was found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allowed for the detection of field emission from the nanowire sidewalls, which occurred with a reduced field enhancement factor and stability. This study further extends GaAs technology to vacuum electronics applications.",
author = "Filippo Giubileo and {Di Bartolomeo}, Antonio and Laura Iemmo and Giuseppe Luongo and Maurizio Passacantando and Eero Koivusalo and Teemu Hakkarainen and Mircea Guina",
year = "2017",
month = "9",
day = "16",
doi = "10.3390/nano7090275",
language = "English",
volume = "7",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI",
number = "9",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Field Emission from Self-Catalyzed GaAs Nanowires

AU - Giubileo, Filippo

AU - Di Bartolomeo, Antonio

AU - Iemmo, Laura

AU - Luongo, Giuseppe

AU - Passacantando, Maurizio

AU - Koivusalo, Eero

AU - Hakkarainen, Teemu

AU - Guina, Mircea

PY - 2017/9/16

Y1 - 2017/9/16

N2 - We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements were taken inside a scanning electron microscope chamber with a nano-controlled tungsten tip functioning as anode. Experimental data were analyzed in the framework of the Fowler-Nordheim theory. We demonstrate stable current up to 10−7 A emitted from the tip of single nanowire, with a field enhancement factor β of up to 112 at anode-cathode distance d = 350 nm. A linear dependence of β on the anode-cathode distance was found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allowed for the detection of field emission from the nanowire sidewalls, which occurred with a reduced field enhancement factor and stability. This study further extends GaAs technology to vacuum electronics applications.

AB - We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements were taken inside a scanning electron microscope chamber with a nano-controlled tungsten tip functioning as anode. Experimental data were analyzed in the framework of the Fowler-Nordheim theory. We demonstrate stable current up to 10−7 A emitted from the tip of single nanowire, with a field enhancement factor β of up to 112 at anode-cathode distance d = 350 nm. A linear dependence of β on the anode-cathode distance was found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allowed for the detection of field emission from the nanowire sidewalls, which occurred with a reduced field enhancement factor and stability. This study further extends GaAs technology to vacuum electronics applications.

U2 - 10.3390/nano7090275

DO - 10.3390/nano7090275

M3 - Article

VL - 7

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 9

M1 - 275

ER -