Flip-chip Wafer-fused OP-VECSELs emitting 3.65 W at the 1.55-μm waveband
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 25 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2019 |
| Publication type | A1 Journal article-refereed |
Abstract
Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-μm wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors fixed on a diamond heat-sink substrate in a flip-chip geometry, incorporated in a V-cavity configuration. A maximum output power of 3.65 W was achieved for a heat sink temperature of 11°C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. This demonstration represents more than 5-fold increase of the output power compared to state-of-the-art flip-chip VECSELs previously reported at the 1.55 μm wavelength range. It opens new perspectives for developing practical VECSEL-based laser systems operating at a wavelength range widely used in many applications.
ASJC Scopus subject areas
Keywords
- diode pumped, Flip-chip devices, Heating systems, Lasers, Mirrors, Optical pumping, Power generation, Semiconductor lasers, Temperature measurement, Vertical cavity surface emitting lasers, Vertical emitting lasers