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Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationApplications and Technology, CLEO_AT 2018
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
DOIs
Publication statusPublished - 2018
Publication typeA4 Article in a conference publication
EventCONFERENCE ON LASERS AND ELECTRO-OPTICS -
Duration: 1 Jan 1900 → …

Conference

ConferenceCONFERENCE ON LASERS AND ELECTRO-OPTICS
Period1/01/00 → …

Abstract

We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.

Publication forum classification

Field of science, Statistics Finland