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Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W

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Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W. / Kantola, Emmi; Leinonen, Tomi; Rantamäki, Antti; Guina, Mircea; Sirbu, Alexei; Iakovlev, Vladimir.

CLEO: Applications and Technology, CLEO_AT 2018. OSA - The Optical Society, 2018.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Kantola, E, Leinonen, T, Rantamäki, A, Guina, M, Sirbu, A & Iakovlev, V 2018, Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W. in CLEO: Applications and Technology, CLEO_AT 2018. OSA - The Optical Society, CONFERENCE ON LASERS AND ELECTRO-OPTICS, 1/01/00. https://doi.org/10.1364/CLEO_AT.2018.JTu2A.10

APA

Kantola, E., Leinonen, T., Rantamäki, A., Guina, M., Sirbu, A., & Iakovlev, V. (2018). Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W. In CLEO: Applications and Technology, CLEO_AT 2018 OSA - The Optical Society. https://doi.org/10.1364/CLEO_AT.2018.JTu2A.10

Vancouver

Kantola E, Leinonen T, Rantamäki A, Guina M, Sirbu A, Iakovlev V. Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W. In CLEO: Applications and Technology, CLEO_AT 2018. OSA - The Optical Society. 2018 https://doi.org/10.1364/CLEO_AT.2018.JTu2A.10

Author

Kantola, Emmi ; Leinonen, Tomi ; Rantamäki, Antti ; Guina, Mircea ; Sirbu, Alexei ; Iakovlev, Vladimir. / Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W. CLEO: Applications and Technology, CLEO_AT 2018. OSA - The Optical Society, 2018.

Bibtex - Download

@inproceedings{b10fcab729e9447496480f44f3ee001f,
title = "Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W",
abstract = "We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.",
author = "Emmi Kantola and Tomi Leinonen and Antti Rantam{\"a}ki and Mircea Guina and Alexei Sirbu and Vladimir Iakovlev",
year = "2018",
doi = "10.1364/CLEO_AT.2018.JTu2A.10",
language = "English",
booktitle = "CLEO",
publisher = "OSA - The Optical Society",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - Frequency-doubled wafer-fused 638 nm VECSEL with an output power of 5.6 W

AU - Kantola, Emmi

AU - Leinonen, Tomi

AU - Rantamäki, Antti

AU - Guina, Mircea

AU - Sirbu, Alexei

AU - Iakovlev, Vladimir

PY - 2018

Y1 - 2018

N2 - We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.

AB - We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.

U2 - 10.1364/CLEO_AT.2018.JTu2A.10

DO - 10.1364/CLEO_AT.2018.JTu2A.10

M3 - Conference contribution

BT - CLEO

PB - OSA - The Optical Society

ER -