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GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy

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GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy. / Zhang, G.; Näppi, J.; Pessa, M.

In: Applied Physics Letters, Vol. 64, 1994, p. 1009-1011.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhang, G, Näppi, J & Pessa, M 1994, 'GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy', Applied Physics Letters, vol. 64, pp. 1009-1011.

APA

Zhang, G., Näppi, J., & Pessa, M. (1994). GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy. Applied Physics Letters, 64, 1009-1011.

Vancouver

Zhang G, Näppi J, Pessa M. GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy. Applied Physics Letters. 1994;64:1009-1011.

Author

Zhang, G. ; Näppi, J. ; Pessa, M. / GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy. In: Applied Physics Letters. 1994 ; Vol. 64. pp. 1009-1011.

Bibtex - Download

@article{29891526efac412db4b2a99e8a18f31c,
title = "GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy",
author = "G. Zhang and J. N{\"a}ppi and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1994",
language = "English",
volume = "64",
pages = "1009--1011",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy

AU - Zhang, G.

AU - Näppi, J.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1994

Y1 - 1994

M3 - Article

VL - 64

SP - 1009

EP - 1011

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -