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Gain characteristics of strained-layer InGaAs/GaAs quantum well lasers

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Gain characteristics of strained-layer InGaAs/GaAs quantum well lasers. / Zhang, G.; Pessa, M.; Ahn, D.

In: Phys. Stat. Sol. (b), Vol. 176, 1993.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhang, G, Pessa, M & Ahn, D 1993, 'Gain characteristics of strained-layer InGaAs/GaAs quantum well lasers', Phys. Stat. Sol. (b), vol. 176.

APA

Zhang, G., Pessa, M., & Ahn, D. (1993). Gain characteristics of strained-layer InGaAs/GaAs quantum well lasers. Phys. Stat. Sol. (b), 176.

Vancouver

Zhang G, Pessa M, Ahn D. Gain characteristics of strained-layer InGaAs/GaAs quantum well lasers. Phys. Stat. Sol. (b). 1993;176.

Author

Zhang, G. ; Pessa, M. ; Ahn, D. / Gain characteristics of strained-layer InGaAs/GaAs quantum well lasers. In: Phys. Stat. Sol. (b). 1993 ; Vol. 176.

Bibtex - Download

@article{a14caf156516404e99fd5bc033ed05ea,
title = "Gain characteristics of strained-layer InGaAs/GaAs quantum well lasers",
author = "G. Zhang and M. Pessa and D. Ahn",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "176",
journal = "Phys. Stat. Sol. (b)",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Gain characteristics of strained-layer InGaAs/GaAs quantum well lasers

AU - Zhang, G.

AU - Pessa, M.

AU - Ahn, D.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1993

Y1 - 1993

M3 - Article

VL - 176

JO - Phys. Stat. Sol. (b)

JF - Phys. Stat. Sol. (b)

ER -