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GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes

Research output: Contribution to journalArticleScientificpeer-review


Original languageEnglish
Pages (from-to)274-278
Number of pages5
JournalOptical Materials
Publication statusPublished - 1 May 2019
Publication typeA1 Journal article-refereed


In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.


  • Fourier-transformed spectroscopy, MBE, Optical gas sensing, Photoluminescence, Superluminescent diodes

Publication forum classification

Field of science, Statistics Finland