GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||5|
|Publication status||Published - 1 May 2019|
|Publication type||A1 Journal article-refereed|
In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.
ASJC Scopus subject areas
- Fourier-transformed spectroscopy, MBE, Optical gas sensing, Photoluminescence, Superluminescent diodes