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GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes

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GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes. / Kurka, M.; Dyksik, M.; Suomalainen, S.; Koivusalo, E.; Guina, M.; Motyka, M.

In: Optical Materials, Vol. 91, 01.05.2019, p. 274-278.

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Kurka, M. ; Dyksik, M. ; Suomalainen, S. ; Koivusalo, E. ; Guina, M. ; Motyka, M. / GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes. In: Optical Materials. 2019 ; Vol. 91. pp. 274-278.

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@article{a7a3bafffa59479d8ce23163db92da83,
title = "GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes",
abstract = "In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.",
keywords = "Fourier-transformed spectroscopy, MBE, Optical gas sensing, Photoluminescence, Superluminescent diodes",
author = "M. Kurka and M. Dyksik and S. Suomalainen and E. Koivusalo and M. Guina and M. Motyka",
year = "2019",
month = "5",
day = "1",
doi = "10.1016/j.optmat.2019.03.036",
language = "English",
volume = "91",
pages = "274--278",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",

}

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TY - JOUR

T1 - GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes

AU - Kurka, M.

AU - Dyksik, M.

AU - Suomalainen, S.

AU - Koivusalo, E.

AU - Guina, M.

AU - Motyka, M.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.

AB - In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.

KW - Fourier-transformed spectroscopy

KW - MBE

KW - Optical gas sensing

KW - Photoluminescence

KW - Superluminescent diodes

U2 - 10.1016/j.optmat.2019.03.036

DO - 10.1016/j.optmat.2019.03.036

M3 - Article

VL - 91

SP - 274

EP - 278

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

ER -