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GaSb diode lasers tunable around 2.6 μ m using silicon photonics resonators or external diffractive gratings

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GaSb diode lasers tunable around 2.6 μ m using silicon photonics resonators or external diffractive gratings. / Ojanen, S. P.; Viheriälä, J.; Cherchi, M.; Zia, N.; Koivusalo, E.; Karioja, P.; Guina, M.

In: Applied Physics Letters, Vol. 116, No. 8, 081105, 24.02.2020.

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@article{ee9fc5d401374f94825bc50ad4eddcf2,
title = "GaSb diode lasers tunable around 2.6 μ m using silicon photonics resonators or external diffractive gratings",
abstract = "We report two tunable diode laser configurations emitting around 2.6 μm, where the gain is provided by a high-gain GaSb-based reflective semiconductor optical amplifier. The lasers are driven in pulsed mode at 20 °C, with a pulse width of 1 μs and 10{\%} duty cycle to minimize heating effects. To demonstrate the broad tuning and high output power capability of the gain chip, an external cavity diode laser configuration based on using a ruled diffraction grating in a Littrow configuration is demonstrated. The laser shows a wide tuning range of 154 nm and a maximum average output power on the order of 10 mW at 2.63 μm, corresponding to a peak power of 100 mW. For a more compact and robust integrated configuration, we consider an extended-cavity laser design where the feedback is provided by a silicon photonics chip acting as a reflector. In particular, the integrated tuning mechanism is based on utilizing the Vernier effect between two thermally tunable micro-ring resonators. In this case, a tuning range of around 70 nm is demonstrated in a compact architecture, with an average power of 1 mW, corresponding to a peak power of 10 mW.",
author = "Ojanen, {S. P.} and J. Viheri{\"a}l{\"a} and M. Cherchi and N. Zia and E. Koivusalo and P. Karioja and M. Guina",
year = "2020",
month = "2",
day = "24",
doi = "10.1063/1.5140062",
language = "English",
volume = "116",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",
number = "8",

}

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TY - JOUR

T1 - GaSb diode lasers tunable around 2.6 μ m using silicon photonics resonators or external diffractive gratings

AU - Ojanen, S. P.

AU - Viheriälä, J.

AU - Cherchi, M.

AU - Zia, N.

AU - Koivusalo, E.

AU - Karioja, P.

AU - Guina, M.

PY - 2020/2/24

Y1 - 2020/2/24

N2 - We report two tunable diode laser configurations emitting around 2.6 μm, where the gain is provided by a high-gain GaSb-based reflective semiconductor optical amplifier. The lasers are driven in pulsed mode at 20 °C, with a pulse width of 1 μs and 10% duty cycle to minimize heating effects. To demonstrate the broad tuning and high output power capability of the gain chip, an external cavity diode laser configuration based on using a ruled diffraction grating in a Littrow configuration is demonstrated. The laser shows a wide tuning range of 154 nm and a maximum average output power on the order of 10 mW at 2.63 μm, corresponding to a peak power of 100 mW. For a more compact and robust integrated configuration, we consider an extended-cavity laser design where the feedback is provided by a silicon photonics chip acting as a reflector. In particular, the integrated tuning mechanism is based on utilizing the Vernier effect between two thermally tunable micro-ring resonators. In this case, a tuning range of around 70 nm is demonstrated in a compact architecture, with an average power of 1 mW, corresponding to a peak power of 10 mW.

AB - We report two tunable diode laser configurations emitting around 2.6 μm, where the gain is provided by a high-gain GaSb-based reflective semiconductor optical amplifier. The lasers are driven in pulsed mode at 20 °C, with a pulse width of 1 μs and 10% duty cycle to minimize heating effects. To demonstrate the broad tuning and high output power capability of the gain chip, an external cavity diode laser configuration based on using a ruled diffraction grating in a Littrow configuration is demonstrated. The laser shows a wide tuning range of 154 nm and a maximum average output power on the order of 10 mW at 2.63 μm, corresponding to a peak power of 100 mW. For a more compact and robust integrated configuration, we consider an extended-cavity laser design where the feedback is provided by a silicon photonics chip acting as a reflector. In particular, the integrated tuning mechanism is based on utilizing the Vernier effect between two thermally tunable micro-ring resonators. In this case, a tuning range of around 70 nm is demonstrated in a compact architecture, with an average power of 1 mW, corresponding to a peak power of 10 mW.

U2 - 10.1063/1.5140062

DO - 10.1063/1.5140062

M3 - Article

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 081105

ER -