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GaSb superluminescent diodes with broadband emission at 2.55 μ m

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GaSb superluminescent diodes with broadband emission at 2.55 μ m. / Zia, Nouman; Viheriälä, Jukka; Koivusalo, Eero; Virtanen, Heikki; Aho, Antti; Suomalainen, Soile; Guina, Mircea.

In: Applied Physics Letters, Vol. 112, No. 5, 051106, 01.2018.

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@article{f5e0afa870ec438c830b69bf67a17767,
title = "GaSb superluminescent diodes with broadband emission at 2.55 μ m",
abstract = "We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.",
author = "Nouman Zia and Jukka Viheri{\"a}l{\"a} and Eero Koivusalo and Heikki Virtanen and Antti Aho and Soile Suomalainen and Mircea Guina",
year = "2018",
month = "1",
doi = "10.1063/1.5015974",
language = "English",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",
number = "5",

}

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TY - JOUR

T1 - GaSb superluminescent diodes with broadband emission at 2.55 μ m

AU - Zia, Nouman

AU - Viheriälä, Jukka

AU - Koivusalo, Eero

AU - Virtanen, Heikki

AU - Aho, Antti

AU - Suomalainen, Soile

AU - Guina, Mircea

PY - 2018/1

Y1 - 2018/1

N2 - We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

AB - We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

U2 - 10.1063/1.5015974

DO - 10.1063/1.5015974

M3 - Article

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 051106

ER -