Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 441-448 |
| Journal | Journal de Physique VI |
| Volume | 3 |
| Publication status | Published - 1993 |
| Publication type | A1 Journal article-refereed |