Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | 441-448 |
Journal | Journal de Physique VI |
Volume | 3 |
Publication status | Published - 1993 |
Publication type | A1 Journal article-refereed |