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Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications

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Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications. / Zhang, G.; Asonen, H.; Pessa, M.

In: Journal de Physique VI, Vol. 3, 1993, p. 441-448.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhang, G, Asonen, H & Pessa, M 1993, 'Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications', Journal de Physique VI, vol. 3, pp. 441-448.

APA

Zhang, G., Asonen, H., & Pessa, M. (1993). Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications. Journal de Physique VI, 3, 441-448.

Vancouver

Author

Zhang, G. ; Asonen, H. ; Pessa, M. / Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications. In: Journal de Physique VI. 1993 ; Vol. 3. pp. 441-448.

Bibtex - Download

@article{e090134b63ea4088ac6c04dc9514cca7,
title = "Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications",
author = "G. Zhang and H. Asonen and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "3",
pages = "441--448",
journal = "Journal de Physique VI",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications

AU - Zhang, G.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1993

Y1 - 1993

M3 - Article

VL - 3

SP - 441

EP - 448

JO - Journal de Physique VI

JF - Journal de Physique VI

ER -