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Graphoepitaxial Directed Self-Assembly of Polystyrene-Block-Polydimethylsiloxane Block Copolymer on Substrates Functionalized with Hexamethyldisilazane to Fabricate Nanoscale Silicon Patterns

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Graphoepitaxial Directed Self-Assembly of Polystyrene-Block-Polydimethylsiloxane Block Copolymer on Substrates Functionalized with Hexamethyldisilazane to Fabricate Nanoscale Silicon Patterns. / Borah, Dipu; Rasappa, Sozaraj; Senthamaraikannan, Ramsankar; Holmes, Justin D.; Morris, Michael A.

In: Advanced Materials Interfaces, Vol. 1, No. 3, 1300102, 01.06.2014.

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Borah, Dipu ; Rasappa, Sozaraj ; Senthamaraikannan, Ramsankar ; Holmes, Justin D. ; Morris, Michael A. / Graphoepitaxial Directed Self-Assembly of Polystyrene-Block-Polydimethylsiloxane Block Copolymer on Substrates Functionalized with Hexamethyldisilazane to Fabricate Nanoscale Silicon Patterns. In: Advanced Materials Interfaces. 2014 ; Vol. 1, No. 3.

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@article{46c6a13a8752403f9b87ed0f68b0c129,
title = "Graphoepitaxial Directed Self-Assembly of Polystyrene-Block-Polydimethylsiloxane Block Copolymer on Substrates Functionalized with Hexamethyldisilazane to Fabricate Nanoscale Silicon Patterns",
abstract = "In block copolymer (BCP) nanolithography, microphase separated polystyrene-block-polydimethylsiloxane (PS-b-PDMS) thin films are particularly attractive as they can form small features and the two blocks can be readily differentiated during pattern transfer. However, PS-b-PDMS is challenging because the chemical differences in the blocks can result in poor surface-wetting, poor pattern orientation control and structural instabilities. Usually the interfacial energies at substrate surface are engineered with the use of a hydroxyl-terminated polydimethylsiloxane (PDMS-OH) homopolymer brush. Herein, we report a facile, rapid and tuneable molecular functionalization approach using hexamethyldisilazane (HMDS). The work is applied to both planar and topographically patterned substrates and investigation of graphoepitaxial methods for directed self-assembly and long-range translational alignment of BCP domains is reported. The hexagonally arranged in-plane and out-of-plane PDMS cylinders structures formed by microphase separation were successfully used as on-chip etch masks for pattern transfer to the underlying silicon substrate. The molecular approach developed here affords significant advantages when compared to the more usual PDMS-OH brushes used.",
keywords = "directed self-assembly, etching, molecular functionalization, pattern transfer, polystyrene-block-polydimethylsiloxane, solvent anneal",
author = "Dipu Borah and Sozaraj Rasappa and Ramsankar Senthamaraikannan and Holmes, {Justin D.} and Morris, {Michael A.}",
year = "2014",
month = "6",
day = "1",
doi = "10.1002/admi.201300102",
language = "English",
volume = "1",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
publisher = "Wiley",
number = "3",

}

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TY - JOUR

T1 - Graphoepitaxial Directed Self-Assembly of Polystyrene-Block-Polydimethylsiloxane Block Copolymer on Substrates Functionalized with Hexamethyldisilazane to Fabricate Nanoscale Silicon Patterns

AU - Borah, Dipu

AU - Rasappa, Sozaraj

AU - Senthamaraikannan, Ramsankar

AU - Holmes, Justin D.

AU - Morris, Michael A.

PY - 2014/6/1

Y1 - 2014/6/1

N2 - In block copolymer (BCP) nanolithography, microphase separated polystyrene-block-polydimethylsiloxane (PS-b-PDMS) thin films are particularly attractive as they can form small features and the two blocks can be readily differentiated during pattern transfer. However, PS-b-PDMS is challenging because the chemical differences in the blocks can result in poor surface-wetting, poor pattern orientation control and structural instabilities. Usually the interfacial energies at substrate surface are engineered with the use of a hydroxyl-terminated polydimethylsiloxane (PDMS-OH) homopolymer brush. Herein, we report a facile, rapid and tuneable molecular functionalization approach using hexamethyldisilazane (HMDS). The work is applied to both planar and topographically patterned substrates and investigation of graphoepitaxial methods for directed self-assembly and long-range translational alignment of BCP domains is reported. The hexagonally arranged in-plane and out-of-plane PDMS cylinders structures formed by microphase separation were successfully used as on-chip etch masks for pattern transfer to the underlying silicon substrate. The molecular approach developed here affords significant advantages when compared to the more usual PDMS-OH brushes used.

AB - In block copolymer (BCP) nanolithography, microphase separated polystyrene-block-polydimethylsiloxane (PS-b-PDMS) thin films are particularly attractive as they can form small features and the two blocks can be readily differentiated during pattern transfer. However, PS-b-PDMS is challenging because the chemical differences in the blocks can result in poor surface-wetting, poor pattern orientation control and structural instabilities. Usually the interfacial energies at substrate surface are engineered with the use of a hydroxyl-terminated polydimethylsiloxane (PDMS-OH) homopolymer brush. Herein, we report a facile, rapid and tuneable molecular functionalization approach using hexamethyldisilazane (HMDS). The work is applied to both planar and topographically patterned substrates and investigation of graphoepitaxial methods for directed self-assembly and long-range translational alignment of BCP domains is reported. The hexagonally arranged in-plane and out-of-plane PDMS cylinders structures formed by microphase separation were successfully used as on-chip etch masks for pattern transfer to the underlying silicon substrate. The molecular approach developed here affords significant advantages when compared to the more usual PDMS-OH brushes used.

KW - directed self-assembly

KW - etching

KW - molecular functionalization

KW - pattern transfer

KW - polystyrene-block-polydimethylsiloxane

KW - solvent anneal

UR - http://www.scopus.com/inward/record.url?scp=84927789563&partnerID=8YFLogxK

U2 - 10.1002/admi.201300102

DO - 10.1002/admi.201300102

M3 - Article

VL - 1

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 3

M1 - 1300102

ER -