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Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

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Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces. / Ledentsov, N. N.; Shchukin, V. A.; Lyytikäinen, J.; Okhotnikov, O.; Cherkashin, N. A.; Shernyakov, Yu M.; Payusov, A. S.; Gordeev, N. Y.; Maximov, M. V.; Schlichting, S.; Nippert, F.; Hoffmann, A.

Proceedings of SPIE: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. Vol. 9383 SPIE, 2015. 93830E.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Ledentsov, NN, Shchukin, VA, Lyytikäinen, J, Okhotnikov, O, Cherkashin, NA, Shernyakov, YM, Payusov, AS, Gordeev, NY, Maximov, MV, Schlichting, S, Nippert, F & Hoffmann, A 2015, Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces. in Proceedings of SPIE: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. vol. 9383, 93830E, SPIE, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, San Francisco, United States, 10/02/15. https://doi.org/10.1117/12.2083953

APA

Ledentsov, N. N., Shchukin, V. A., Lyytikäinen, J., Okhotnikov, O., Cherkashin, N. A., Shernyakov, Y. M., ... Hoffmann, A. (2015). Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces. In Proceedings of SPIE: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX (Vol. 9383). [93830E] SPIE. https://doi.org/10.1117/12.2083953

Vancouver

Ledentsov NN, Shchukin VA, Lyytikäinen J, Okhotnikov O, Cherkashin NA, Shernyakov YM et al. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces. In Proceedings of SPIE: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. Vol. 9383. SPIE. 2015. 93830E https://doi.org/10.1117/12.2083953

Author

Ledentsov, N. N. ; Shchukin, V. A. ; Lyytikäinen, J. ; Okhotnikov, O. ; Cherkashin, N. A. ; Shernyakov, Yu M. ; Payusov, A. S. ; Gordeev, N. Y. ; Maximov, M. V. ; Schlichting, S. ; Nippert, F. ; Hoffmann, A. / Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces. Proceedings of SPIE: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. Vol. 9383 SPIE, 2015.

Bibtex - Download

@inproceedings{b69f4b467a894a41818116fa1ba090d1,
title = "Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces",
abstract = "We report on green (550-560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P-(Al0.8Ga0.2)0.5In0.5P double p-i-n heterostructures with monolayer-scale tensile strained GaP insertions in the cladding layers and light-emitting diodes (LEDs) based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP-barrier substrate orientation-dependent heights should match the predictions of the flat model. At moderate current densities (∼500 A/cm2) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (∼550 nm at room temperature). At high current densities (>1 kA/cm2) a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p- doped (Al0.8Ga0.2)0.5In0.5P cladding layers.",
keywords = "high-index surface, light-emitting diode, tensile strained barrier",
author = "Ledentsov, {N. N.} and Shchukin, {V. A.} and J. Lyytik{\"a}inen and O. Okhotnikov and Cherkashin, {N. A.} and Shernyakov, {Yu M.} and Payusov, {A. S.} and Gordeev, {N. Y.} and Maximov, {M. V.} and S. Schlichting and F. Nippert and A. Hoffmann",
year = "2015",
doi = "10.1117/12.2083953",
language = "English",
isbn = "9781628414738",
volume = "9383",
booktitle = "Proceedings of SPIE",
publisher = "SPIE",
address = "United States",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

AU - Ledentsov, N. N.

AU - Shchukin, V. A.

AU - Lyytikäinen, J.

AU - Okhotnikov, O.

AU - Cherkashin, N. A.

AU - Shernyakov, Yu M.

AU - Payusov, A. S.

AU - Gordeev, N. Y.

AU - Maximov, M. V.

AU - Schlichting, S.

AU - Nippert, F.

AU - Hoffmann, A.

PY - 2015

Y1 - 2015

N2 - We report on green (550-560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P-(Al0.8Ga0.2)0.5In0.5P double p-i-n heterostructures with monolayer-scale tensile strained GaP insertions in the cladding layers and light-emitting diodes (LEDs) based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP-barrier substrate orientation-dependent heights should match the predictions of the flat model. At moderate current densities (∼500 A/cm2) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (∼550 nm at room temperature). At high current densities (>1 kA/cm2) a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p- doped (Al0.8Ga0.2)0.5In0.5P cladding layers.

AB - We report on green (550-560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P-(Al0.8Ga0.2)0.5In0.5P double p-i-n heterostructures with monolayer-scale tensile strained GaP insertions in the cladding layers and light-emitting diodes (LEDs) based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP-barrier substrate orientation-dependent heights should match the predictions of the flat model. At moderate current densities (∼500 A/cm2) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (∼550 nm at room temperature). At high current densities (>1 kA/cm2) a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p- doped (Al0.8Ga0.2)0.5In0.5P cladding layers.

KW - high-index surface

KW - light-emitting diode

KW - tensile strained barrier

U2 - 10.1117/12.2083953

DO - 10.1117/12.2083953

M3 - Conference contribution

SN - 9781628414738

VL - 9383

BT - Proceedings of SPIE

PB - SPIE

ER -