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GSMBE growth of GaInAsP on GaAs substrates and its applications to 0.98 um lasers

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GSMBE growth of GaInAsP on GaAs substrates and its applications to 0.98 um lasers. / Zhang, G.; Ovtchinnikov, A.; Näppi, J.; Hakkarainen, T.; Asonen, H.

In: Journal of Crystal Growth, 1992.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhang, G, Ovtchinnikov, A, Näppi, J, Hakkarainen, T & Asonen, H 1992, 'GSMBE growth of GaInAsP on GaAs substrates and its applications to 0.98 um lasers', Journal of Crystal Growth.

APA

Zhang, G., Ovtchinnikov, A., Näppi, J., Hakkarainen, T., & Asonen, H. (1992). GSMBE growth of GaInAsP on GaAs substrates and its applications to 0.98 um lasers. Journal of Crystal Growth.

Vancouver

Zhang G, Ovtchinnikov A, Näppi J, Hakkarainen T, Asonen H. GSMBE growth of GaInAsP on GaAs substrates and its applications to 0.98 um lasers. Journal of Crystal Growth. 1992.

Author

Zhang, G. ; Ovtchinnikov, A. ; Näppi, J. ; Hakkarainen, T. ; Asonen, H. / GSMBE growth of GaInAsP on GaAs substrates and its applications to 0.98 um lasers. In: Journal of Crystal Growth. 1992.

Bibtex - Download

@article{6c52ce1a716a4450900470fbc82a2198,
title = "GSMBE growth of GaInAsP on GaAs substrates and its applications to 0.98 um lasers",
author = "G. Zhang and A. Ovtchinnikov and J. N{\"a}ppi and T. Hakkarainen and H. Asonen",
note = "Contribution: organisation=fys,FACT1=1",
year = "1992",
language = "English",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - GSMBE growth of GaInAsP on GaAs substrates and its applications to 0.98 um lasers

AU - Zhang, G.

AU - Ovtchinnikov, A.

AU - Näppi, J.

AU - Hakkarainen, T.

AU - Asonen, H.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1992

Y1 - 1992

M3 - Article

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -