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High power GaInNAs VECSEL emitting at 1230/615 nm

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationThe European Conference on Lasers and Electro-Optics 2015
PublisherOSA
ISBN (Print)978-1-4673-7475-0
Publication statusPublished - 22 Jun 2015
Publication typeA4 Article in a conference publication
EventEuropean Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference -
Duration: 1 Jan 1900 → …

Conference

ConferenceEuropean Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference
Abbreviated titleCLEO/Europe-EQEC
Period1/01/00 → …

Abstract

We report a frequency-doubled VECSEL operating at 1230/615 nm. The gain chip was grown by plasma-assisted MBE and comprised 10 GaInNAs quantum wells. Preliminary experiments show an output power of >8 W at 615 nm.

Publication forum classification

Field of science, Statistics Finland