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High power GaInNAs VECSEL emitting at 1230/615 nm

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High power GaInNAs VECSEL emitting at 1230/615 nm. / Penttinen, Jussi-Pekka; Leinonen, Tomi; Korpijärvi, Ville-Markus; Kantola, Emmi; Guina, Mircea.

The European Conference on Lasers and Electro-Optics 2015. OSA, 2015.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Penttinen, J-P, Leinonen, T, Korpijärvi, V-M, Kantola, E & Guina, M 2015, High power GaInNAs VECSEL emitting at 1230/615 nm. in The European Conference on Lasers and Electro-Optics 2015. OSA, European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 1/01/00.

APA

Penttinen, J-P., Leinonen, T., Korpijärvi, V-M., Kantola, E., & Guina, M. (2015). High power GaInNAs VECSEL emitting at 1230/615 nm. In The European Conference on Lasers and Electro-Optics 2015 OSA.

Vancouver

Penttinen J-P, Leinonen T, Korpijärvi V-M, Kantola E, Guina M. High power GaInNAs VECSEL emitting at 1230/615 nm. In The European Conference on Lasers and Electro-Optics 2015. OSA. 2015

Author

Penttinen, Jussi-Pekka ; Leinonen, Tomi ; Korpijärvi, Ville-Markus ; Kantola, Emmi ; Guina, Mircea. / High power GaInNAs VECSEL emitting at 1230/615 nm. The European Conference on Lasers and Electro-Optics 2015. OSA, 2015.

Bibtex - Download

@inproceedings{3d413f32c2bd4307925c7c3c2ff952a7,
title = "High power GaInNAs VECSEL emitting at 1230/615 nm",
abstract = "We report a frequency-doubled VECSEL operating at 1230/615 nm. The gain chip was grown by plasma-assisted MBE and comprised 10 GaInNAs quantum wells. Preliminary experiments show an output power of >8 W at 615 nm.",
author = "Jussi-Pekka Penttinen and Tomi Leinonen and Ville-Markus Korpij{\"a}rvi and Emmi Kantola and Mircea Guina",
year = "2015",
month = "6",
day = "22",
language = "English",
isbn = "978-1-4673-7475-0",
booktitle = "The European Conference on Lasers and Electro-Optics 2015",
publisher = "OSA",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - High power GaInNAs VECSEL emitting at 1230/615 nm

AU - Penttinen, Jussi-Pekka

AU - Leinonen, Tomi

AU - Korpijärvi, Ville-Markus

AU - Kantola, Emmi

AU - Guina, Mircea

PY - 2015/6/22

Y1 - 2015/6/22

N2 - We report a frequency-doubled VECSEL operating at 1230/615 nm. The gain chip was grown by plasma-assisted MBE and comprised 10 GaInNAs quantum wells. Preliminary experiments show an output power of >8 W at 615 nm.

AB - We report a frequency-doubled VECSEL operating at 1230/615 nm. The gain chip was grown by plasma-assisted MBE and comprised 10 GaInNAs quantum wells. Preliminary experiments show an output power of >8 W at 615 nm.

UR - https://www.osapublishing.org/abstract.cfm?uri=cleo_europe-2015-CB_P_1&origin=search

M3 - Conference contribution

SN - 978-1-4673-7475-0

BT - The European Conference on Lasers and Electro-Optics 2015

PB - OSA

ER -