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High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

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Details

Original languageEnglish
Article numberPIP2784
Pages (from-to)914-919
Number of pages6
JournalProgress in Photovoltaics: Research and Applications
Volume24
Issue number7
DOIs
Publication statusPublished - 17 Jun 2016
Publication typeA1 Journal article-refereed

Abstract

Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was first grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency tandem solar cells with three or more junctions.

Keywords

  • multijunction solar cells, molecular beam epitaxy, metal-organic chemical vapor deposition, dilute nitride semiconductors

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