High-efﬁciency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||6|
|Journal||Progress in Photovoltaics: Research and Applications|
|Publication status||Published - 17 Jun 2016|
|Publication type||A1 Journal article-refereed|
Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efﬁciency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was ﬁrst grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efﬁciency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efﬁciency tandem solar cells with three or more junctions.
- multijunction solar cells, molecular beam epitaxy, metal-organic chemical vapor deposition, dilute nitride semiconductors