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Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers

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Original languageEnglish
Article number085305
JournalJournal of Applied Physics
Volume126
Issue number8
DOIs
Publication statusPublished - 28 Aug 2019
Publication typeA1 Journal article-refereed

Abstract

Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-Temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.

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Field of science, Statistics Finland