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Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers

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Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers. / Luna, E.; Wu, M.; Aoki, T.; McCartney, M. R.; Puustinen, J.; Hilska, J.; Guina, M.; Smith, D. J.; Trampert, A.

In: Journal of Applied Physics, Vol. 126, No. 8, 085305, 28.08.2019.

Research output: Contribution to journalArticleScientificpeer-review

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Luna, E, Wu, M, Aoki, T, McCartney, MR, Puustinen, J, Hilska, J, Guina, M, Smith, DJ & Trampert, A 2019, 'Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers', Journal of Applied Physics, vol. 126, no. 8, 085305. https://doi.org/10.1063/1.5111532

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Luna, E. ; Wu, M. ; Aoki, T. ; McCartney, M. R. ; Puustinen, J. ; Hilska, J. ; Guina, M. ; Smith, D. J. ; Trampert, A. / Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers. In: Journal of Applied Physics. 2019 ; Vol. 126, No. 8.

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@article{1aa605a0d4cf422888f08d5e1825f293,
title = "Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers",
abstract = "Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-Temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.",
author = "E. Luna and M. Wu and T. Aoki and McCartney, {M. R.} and J. Puustinen and J. Hilska and M. Guina and Smith, {D. J.} and A. Trampert",
note = "EXT={"}Wu, M.{"}",
year = "2019",
month = "8",
day = "28",
doi = "10.1063/1.5111532",
language = "English",
volume = "126",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "8",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers

AU - Luna, E.

AU - Wu, M.

AU - Aoki, T.

AU - McCartney, M. R.

AU - Puustinen, J.

AU - Hilska, J.

AU - Guina, M.

AU - Smith, D. J.

AU - Trampert, A.

N1 - EXT="Wu, M."

PY - 2019/8/28

Y1 - 2019/8/28

N2 - Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-Temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.

AB - Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-Temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.

U2 - 10.1063/1.5111532

DO - 10.1063/1.5111532

M3 - Article

VL - 126

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 085305

ER -