InAs/InP quantum dot VECSEL emitting at 1.5 μ m
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Details
| Original language | English |
|---|---|
| Article number | 171105 |
| Journal | Applied Physics Letters |
| Volume | 115 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 21 Oct 2019 |
| Publication type | A1 Journal article-refereed |
Abstract
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layer thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media.