InAs/InP quantum dot VECSEL emitting at 1.5 μ m
Research output: Contribution to journal › Article › Scientific › peer-review
|Journal||Applied Physics Letters|
|Publication status||Published - 21 Oct 2019|
|Publication type||A1 Journal article-refereed|
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layer thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media.