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Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy

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Details

Original languageEnglish
Pages (from-to)L1049-L1051
JournalJpn.J.Appl.Lett
Volume33
Publication statusPublished - 1994
Publication typeA1 Journal article-refereed

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