Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy
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Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy. / Zhang, G.; Asonen, H.; Pessa, M.
In: Jpn.J.Appl.Lett, Vol. 33, 1994, p. L1049-L1051.Research output: Contribution to journal › Article › Scientific › peer-review
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TY - JOUR
T1 - Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy
AU - Zhang, G.
AU - Asonen, H.
AU - Pessa, M.
N1 - Contribution: organisation=fys,FACT1=1
PY - 1994
Y1 - 1994
M3 - Article
VL - 33
SP - L1049-L1051
JO - Jpn.J.Appl.Lett
JF - Jpn.J.Appl.Lett
ER -