Tampere University of Technology

TUTCRIS Research Portal

Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy

Research output: Contribution to journalArticleScientificpeer-review

Standard

Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy. / Zhang, G.; Asonen, H.; Pessa, M.

In: Jpn.J.Appl.Lett, Vol. 33, 1994, p. L1049-L1051.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhang, G, Asonen, H & Pessa, M 1994, 'Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy', Jpn.J.Appl.Lett, vol. 33, pp. L1049-L1051.

APA

Zhang, G., Asonen, H., & Pessa, M. (1994). Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy. Jpn.J.Appl.Lett, 33, L1049-L1051.

Vancouver

Author

Zhang, G. ; Asonen, H. ; Pessa, M. / Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy. In: Jpn.J.Appl.Lett. 1994 ; Vol. 33. pp. L1049-L1051.

Bibtex - Download

@article{9f161378e51b4077a56d79d0bc180795,
title = "Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy",
author = "G. Zhang and H. Asonen and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1994",
language = "English",
volume = "33",
pages = "L1049--L1051",
journal = "Jpn.J.Appl.Lett",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy

AU - Zhang, G.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1994

Y1 - 1994

M3 - Article

VL - 33

SP - L1049-L1051

JO - Jpn.J.Appl.Lett

JF - Jpn.J.Appl.Lett

ER -