Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy
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Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy. / Zhang, G.; Asonen, H.; Pessa, M.
In: Jpn.J.Appl.Lett, Vol. 33, 1994, p. L1049-L1051.Research output: Contribution to journal › Article › Scientific › peer-review
Harvard
Zhang, G, Asonen, H & Pessa, M 1994, 'Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy', Jpn.J.Appl.Lett, vol. 33, pp. L1049-L1051.
APA
Zhang, G., Asonen, H., & Pessa, M. (1994). Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy. Jpn.J.Appl.Lett, 33, L1049-L1051.
Vancouver
Zhang G, Asonen H, Pessa M. Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy. Jpn.J.Appl.Lett. 1994;33:L1049-L1051.
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Bibtex - Download
@article{9f161378e51b4077a56d79d0bc180795,
title = "Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy",
author = "G. Zhang and H. Asonen and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1994",
language = "English",
volume = "33",
pages = "L1049--L1051",
journal = "Jpn.J.Appl.Lett",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Incorporation of group-V elements in GaxIn1-xAsyP1-y layers grown on GaAs by gas-source molecular beam epitaxy
AU - Zhang, G.
AU - Asonen, H.
AU - Pessa, M.
N1 - Contribution: organisation=fys,FACT1=1
PY - 1994
Y1 - 1994
M3 - Article
VL - 33
SP - L1049-L1051
JO - Jpn.J.Appl.Lett
JF - Jpn.J.Appl.Lett
ER -