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Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)249-254
JournalJournal of Crystal Growth
Volume281
Issue number2-4
DOIs
Publication statusPublished - 2005
Publication typeA1 Journal article-refereed

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