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Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells

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Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells. / Polojärvi, Ville; Aho, Arto; Tukiainen, Antti; Raappana, Marianna; Aho, Timo; Schramm, Andreas; Guina, Mircea.

In: Solar Energy Materials and Solar Cells, Vol. 149, 01.05.2016, p. 213-220.

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@article{11a8a3d5f29241e8ab25b2832af0e456,
title = "Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells",
abstract = "The correlation between the As to group III flux ratio and photovoltaic performance of GaIn0.1N0.03As solar cells fabricated by molecular beam epitaxy is systematically investigated. The results show that flux ratio has a remarkable influence on the formation of defect traps. Furthermore, the formation of defects at different flux ratios is correlating with the variation of the background doping level and the photovoltaic performance. In particular, this study reveals a linear dependency between current generation, dark saturation current, defect densities, photoluminescence peak intensity and the flux ratio. A significant increase in solar cell performance, exhibiting maximum external quantum efficiency of 90{\%}, is obtained when As/group-III ratio is decreased close to the stoichiometric limit. For optimized growth condition, the 1 eV GaIn0.1N0.03As solar cell exhibits a short circuit current density as high as 17.9 mA/cm2 calculated from the external quantum efficiency data (AM0 conditions) with 870 nm high-pass filter. This value reflects the potential of the GaInNAs cell for current matching and power generation in high efficiency solar cells incorporating three- or four- junctions.",
keywords = "Defects, Dilute nitrides, III-V semiconductors, Material characterization, Molecular beam epitaxy, Multijunction solar cells",
author = "Ville Poloj{\"a}rvi and Arto Aho and Antti Tukiainen and Marianna Raappana and Timo Aho and Andreas Schramm and Mircea Guina",
year = "2016",
month = "5",
day = "1",
doi = "10.1016/j.solmat.2016.01.024",
language = "English",
volume = "149",
pages = "213--220",
journal = "Solar materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

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TY - JOUR

T1 - Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells

AU - Polojärvi, Ville

AU - Aho, Arto

AU - Tukiainen, Antti

AU - Raappana, Marianna

AU - Aho, Timo

AU - Schramm, Andreas

AU - Guina, Mircea

PY - 2016/5/1

Y1 - 2016/5/1

N2 - The correlation between the As to group III flux ratio and photovoltaic performance of GaIn0.1N0.03As solar cells fabricated by molecular beam epitaxy is systematically investigated. The results show that flux ratio has a remarkable influence on the formation of defect traps. Furthermore, the formation of defects at different flux ratios is correlating with the variation of the background doping level and the photovoltaic performance. In particular, this study reveals a linear dependency between current generation, dark saturation current, defect densities, photoluminescence peak intensity and the flux ratio. A significant increase in solar cell performance, exhibiting maximum external quantum efficiency of 90%, is obtained when As/group-III ratio is decreased close to the stoichiometric limit. For optimized growth condition, the 1 eV GaIn0.1N0.03As solar cell exhibits a short circuit current density as high as 17.9 mA/cm2 calculated from the external quantum efficiency data (AM0 conditions) with 870 nm high-pass filter. This value reflects the potential of the GaInNAs cell for current matching and power generation in high efficiency solar cells incorporating three- or four- junctions.

AB - The correlation between the As to group III flux ratio and photovoltaic performance of GaIn0.1N0.03As solar cells fabricated by molecular beam epitaxy is systematically investigated. The results show that flux ratio has a remarkable influence on the formation of defect traps. Furthermore, the formation of defects at different flux ratios is correlating with the variation of the background doping level and the photovoltaic performance. In particular, this study reveals a linear dependency between current generation, dark saturation current, defect densities, photoluminescence peak intensity and the flux ratio. A significant increase in solar cell performance, exhibiting maximum external quantum efficiency of 90%, is obtained when As/group-III ratio is decreased close to the stoichiometric limit. For optimized growth condition, the 1 eV GaIn0.1N0.03As solar cell exhibits a short circuit current density as high as 17.9 mA/cm2 calculated from the external quantum efficiency data (AM0 conditions) with 870 nm high-pass filter. This value reflects the potential of the GaInNAs cell for current matching and power generation in high efficiency solar cells incorporating three- or four- junctions.

KW - Defects

KW - Dilute nitrides

KW - III-V semiconductors

KW - Material characterization

KW - Molecular beam epitaxy

KW - Multijunction solar cells

U2 - 10.1016/j.solmat.2016.01.024

DO - 10.1016/j.solmat.2016.01.024

M3 - Article

VL - 149

SP - 213

EP - 220

JO - Solar materials and Solar Cells

JF - Solar materials and Solar Cells

SN - 0927-0248

ER -