Influence of strain on lasing performances os Al-free strained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers emitting at 0.78 - y - 1.1 um
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 183-188 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 1 |
| Issue number | 2 |
| Publication status | Published - 1995 |
| Publication type | A1 Journal article-refereed |