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Influence of strain on lasing performances os Al-free strained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers emitting at 0.78 - y - 1.1 um

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Original languageEnglish
Pages (from-to)183-188
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number2
Publication statusPublished - 1995
Publication typeA1 Journal article-refereed

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