Influence of strain on lasing performances os Al-free strained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers emitting at 0.78 - y - 1.1 um
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | 183-188 |
Journal | IEEE Journal of Selected Topics in Quantum Electronics |
Volume | 1 |
Issue number | 2 |
Publication status | Published - 1995 |
Publication type | A1 Journal article-refereed |