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Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy

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Details

Original languageEnglish
Pages (from-to)153-159
JournalMat. Res. Soc. Symp. Proc.
Volume281
Publication statusPublished - 1993
Publication typeA1 Journal article-refereed

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