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Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy

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Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy. / Zhang, G.; Ovtchinnikov, A.; Pessa, M.

In: Mat. Res. Soc. Symp. Proc., Vol. 281, 1993, p. 153-159.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhang, G, Ovtchinnikov, A & Pessa, M 1993, 'Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy', Mat. Res. Soc. Symp. Proc., vol. 281, pp. 153-159.

APA

Zhang, G., Ovtchinnikov, A., & Pessa, M. (1993). Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy. Mat. Res. Soc. Symp. Proc., 281, 153-159.

Vancouver

Zhang G, Ovtchinnikov A, Pessa M. Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy. Mat. Res. Soc. Symp. Proc. 1993;281:153-159.

Author

Zhang, G. ; Ovtchinnikov, A. ; Pessa, M. / Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy. In: Mat. Res. Soc. Symp. Proc. 1993 ; Vol. 281. pp. 153-159.

Bibtex - Download

@article{67597f21fe124edf861c6c206c0e054f,
title = "Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy",
author = "G. Zhang and A. Ovtchinnikov and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "281",
pages = "153--159",
journal = "Mat. Res. Soc. Symp. Proc.",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy

AU - Zhang, G.

AU - Ovtchinnikov, A.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1993

Y1 - 1993

M3 - Article

VL - 281

SP - 153

EP - 159

JO - Mat. Res. Soc. Symp. Proc.

JF - Mat. Res. Soc. Symp. Proc.

ER -