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Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE

Research output: Other conference contributionPaper, poster or abstractScientific

Details

Original languageEnglish
Publication statusPublished - 5 Sep 2018
EventICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy - Shanghai, China
Duration: 2 Sep 20187 Sep 2018
http://mbe2018.csp.escience.cn/dct/page/1

Conference

ConferenceICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy
CountryChina
CityShanghai
Period2/09/187/09/18
Internet address

Abstract

We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.

Keywords

  • Epitaxy, Bismides, III-V semiconductors, GaSbBi