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Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE

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Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE. / Hilska, Joonas; Koivusalo, Eero; Puustinen, Janne; Suomalainen, Soile; Guina, Mircea.

2018. Paper presented at ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy, Shanghai, China.

Research output: Other conference contributionPaper, poster or abstractScientific

Harvard

Hilska, J, Koivusalo, E, Puustinen, J, Suomalainen, S & Guina, M 2018, 'Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE' Paper presented at ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy, Shanghai, China, 2/09/18 - 7/09/18, .

APA

Hilska, J., Koivusalo, E., Puustinen, J., Suomalainen, S., & Guina, M. (2018). Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE. Paper presented at ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy, Shanghai, China.

Vancouver

Hilska J, Koivusalo E, Puustinen J, Suomalainen S, Guina M. Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE. 2018. Paper presented at ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy, Shanghai, China.

Author

Hilska, Joonas ; Koivusalo, Eero ; Puustinen, Janne ; Suomalainen, Soile ; Guina, Mircea. / Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE. Paper presented at ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy, Shanghai, China.

Bibtex - Download

@conference{53ec1858c29345a0a34256fd984a3f77,
title = "Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE",
abstract = "We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8{\%}) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.",
keywords = "Epitaxy, Bismides, III-V semiconductors, GaSbBi",
author = "Joonas Hilska and Eero Koivusalo and Janne Puustinen and Soile Suomalainen and Mircea Guina",
year = "2018",
month = "9",
day = "5",
language = "English",
note = "ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy ; Conference date: 02-09-2018 Through 07-09-2018",
url = "http://mbe2018.csp.escience.cn/dct/page/1",

}

RIS (suitable for import to EndNote) - Download

TY - CONF

T1 - Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE

AU - Hilska, Joonas

AU - Koivusalo, Eero

AU - Puustinen, Janne

AU - Suomalainen, Soile

AU - Guina, Mircea

PY - 2018/9/5

Y1 - 2018/9/5

N2 - We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.

AB - We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.

KW - Epitaxy

KW - Bismides

KW - III-V semiconductors

KW - GaSbBi

M3 - Paper, poster or abstract

ER -