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Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Article number063514
Number of pages4
JournalJournal of Applied Physics
Volume107
Issue number6
DOIs
Publication statusPublished - 15 Mar 2010
Externally publishedYes
Publication typeA1 Journal article-refereed

Abstract

Light-induced domain reversal of near-stoichiometric Mg-doped LiNbO(3) crystal was investigated with a focused 532 nm continuous laser beam. The lowest electric field applied to accomplish domain nucleation is only 30 V/mm and 1/80 of the coercive field, which is safe and convenient for us to fabricate domain structures. Under this superlow applied field, the pinning effect of domain wall is so obvious that the inverted domain reveals a gear shape contrary to the hexagon in a higher applied field. Then two-dimensional domain patterns with the smallest domain size of 4 mu m have been fabricated.

Keywords

  • electric domain walls, ferroelectric materials, laser beam effects, lithium compounds, magnesium, nucleation, LINBO3, INVERSION, DEFECTS, WALL