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Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate

Research output: Contribution to journalArticleScientificpeer-review

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Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate. / Zeng, Hao; Kong, Yongfa; Liu, Hongde; Chen, Shaolin; Huang, Ziheng; Ge, Xinyu; Xu, Jingjun.

In: Journal of Applied Physics, Vol. 107, No. 6, 063514, 15.03.2010.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zeng, H, Kong, Y, Liu, H, Chen, S, Huang, Z, Ge, X & Xu, J 2010, 'Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate', Journal of Applied Physics, vol. 107, no. 6, 063514. https://doi.org/10.1063/1.3359721

APA

Zeng, H., Kong, Y., Liu, H., Chen, S., Huang, Z., Ge, X., & Xu, J. (2010). Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate. Journal of Applied Physics, 107(6), [063514]. https://doi.org/10.1063/1.3359721

Vancouver

Zeng H, Kong Y, Liu H, Chen S, Huang Z, Ge X et al. Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate. Journal of Applied Physics. 2010 Mar 15;107(6). 063514. https://doi.org/10.1063/1.3359721

Author

Zeng, Hao ; Kong, Yongfa ; Liu, Hongde ; Chen, Shaolin ; Huang, Ziheng ; Ge, Xinyu ; Xu, Jingjun. / Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate. In: Journal of Applied Physics. 2010 ; Vol. 107, No. 6.

Bibtex - Download

@article{193387ca79e74dfe90ff9665bd5c5b31,
title = "Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate",
abstract = "Light-induced domain reversal of near-stoichiometric Mg-doped LiNbO(3) crystal was investigated with a focused 532 nm continuous laser beam. The lowest electric field applied to accomplish domain nucleation is only 30 V/mm and 1/80 of the coercive field, which is safe and convenient for us to fabricate domain structures. Under this superlow applied field, the pinning effect of domain wall is so obvious that the inverted domain reveals a gear shape contrary to the hexagon in a higher applied field. Then two-dimensional domain patterns with the smallest domain size of 4 mu m have been fabricated.",
keywords = "electric domain walls, ferroelectric materials, laser beam effects, lithium compounds, magnesium, nucleation, LINBO3, INVERSION, DEFECTS, WALL",
author = "Hao Zeng and Yongfa Kong and Hongde Liu and Shaolin Chen and Ziheng Huang and Xinyu Ge and Jingjun Xu",
year = "2010",
month = "3",
day = "15",
doi = "10.1063/1.3359721",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "6",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate

AU - Zeng, Hao

AU - Kong, Yongfa

AU - Liu, Hongde

AU - Chen, Shaolin

AU - Huang, Ziheng

AU - Ge, Xinyu

AU - Xu, Jingjun

PY - 2010/3/15

Y1 - 2010/3/15

N2 - Light-induced domain reversal of near-stoichiometric Mg-doped LiNbO(3) crystal was investigated with a focused 532 nm continuous laser beam. The lowest electric field applied to accomplish domain nucleation is only 30 V/mm and 1/80 of the coercive field, which is safe and convenient for us to fabricate domain structures. Under this superlow applied field, the pinning effect of domain wall is so obvious that the inverted domain reveals a gear shape contrary to the hexagon in a higher applied field. Then two-dimensional domain patterns with the smallest domain size of 4 mu m have been fabricated.

AB - Light-induced domain reversal of near-stoichiometric Mg-doped LiNbO(3) crystal was investigated with a focused 532 nm continuous laser beam. The lowest electric field applied to accomplish domain nucleation is only 30 V/mm and 1/80 of the coercive field, which is safe and convenient for us to fabricate domain structures. Under this superlow applied field, the pinning effect of domain wall is so obvious that the inverted domain reveals a gear shape contrary to the hexagon in a higher applied field. Then two-dimensional domain patterns with the smallest domain size of 4 mu m have been fabricated.

KW - electric domain walls

KW - ferroelectric materials

KW - laser beam effects

KW - lithium compounds

KW - magnesium

KW - nucleation

KW - LINBO3

KW - INVERSION

KW - DEFECTS

KW - WALL

U2 - 10.1063/1.3359721

DO - 10.1063/1.3359721

M3 - Article

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 063514

ER -