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Lithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si(111)

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Article number275301
JournalNanotechnology
Volume26
Issue number27
DOIs
Publication statusPublished - 18 Jul 2015
Publication typeA1 Journal article-refereed

Abstract

We report self-catalyzed growth of GaAs nanowires (NWs) on Si/SiO<inf>x</inf> patterns fabricated by a lithography-free method. The patterns are defined using droplet epitaxy of GaAs nanocrystals, spontaneous oxidation, and thermal annealing. We investigate the influence of the size and density of the nucleation sites on the NW growth process and show that this approach enables the fabrication of highly uniform GaAs NWs with controllable density. The pattern fabrication and NW growth process are studied and discussed in relation to the surface morphology and chemical properties of the Si/SiO<inf>x</inf> patterns. Furthermore, the optical quality of the NWs is investigated by photoluminescence experiments performed for GaAs-AlGaAs core-shell NWs.

Keywords

  • droplet epitaxy, GaAs, nanowires, self-catalyzed

Publication forum classification

Field of science, Statistics Finland