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Low temperature temporal and spatial atomic layer deposition of TiO2 films

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Low temperature temporal and spatial atomic layer deposition of TiO2 films. / Aghaee, Morteza; Maydannik, Philipp S.; Johansson, Petri; Kuusipalo, Jurkka; Creatore, Mariadriana; Homola, Tomas; Cameron, David C.

In: Journal of Vacuum Science & Technology A, Vol. 33, No. 4, 041512, 07.2015.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Aghaee, M, Maydannik, PS, Johansson, P, Kuusipalo, J, Creatore, M, Homola, T & Cameron, DC 2015, 'Low temperature temporal and spatial atomic layer deposition of TiO2 films', Journal of Vacuum Science & Technology A, vol. 33, no. 4, 041512. https://doi.org/10.1116/1.4922588

APA

Aghaee, M., Maydannik, P. S., Johansson, P., Kuusipalo, J., Creatore, M., Homola, T., & Cameron, D. C. (2015). Low temperature temporal and spatial atomic layer deposition of TiO2 films. Journal of Vacuum Science & Technology A, 33(4), [041512]. https://doi.org/10.1116/1.4922588

Vancouver

Aghaee M, Maydannik PS, Johansson P, Kuusipalo J, Creatore M, Homola T et al. Low temperature temporal and spatial atomic layer deposition of TiO2 films. Journal of Vacuum Science & Technology A. 2015 Jul;33(4). 041512. https://doi.org/10.1116/1.4922588

Author

Aghaee, Morteza ; Maydannik, Philipp S. ; Johansson, Petri ; Kuusipalo, Jurkka ; Creatore, Mariadriana ; Homola, Tomas ; Cameron, David C. / Low temperature temporal and spatial atomic layer deposition of TiO2 films. In: Journal of Vacuum Science & Technology A. 2015 ; Vol. 33, No. 4.

Bibtex - Download

@article{77c954d79a8e4eb7a3e1e31569c343e8,
title = "Low temperature temporal and spatial atomic layer deposition of TiO2 films",
abstract = "Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80-120 degrees C) were used to grow moisture barrier TiO2 films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 angstrom/cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO2 films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO2, but the deposition time could be reduced using SALD. The TiO2 films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 x 10(-4) g day(-1) m(-2) (38 degrees C and 90{\%} RH) was measured for 20 nm of TiO2 film deposited by plasma-assisted ALD. (C) 2015 American Vacuum Society.",
keywords = "DIOXIDE THIN-FILMS, BINARY REACTION SEQUENCE, TITANIUM-DIOXIDE, BARRIER PROPERTIES, ROOM-TEMPERATURE, PLASMA, AL2O3, ISOPROPOXIDE, PASSIVATION, PRECURSOR",
author = "Morteza Aghaee and Maydannik, {Philipp S.} and Petri Johansson and Jurkka Kuusipalo and Mariadriana Creatore and Tomas Homola and Cameron, {David C.}",
year = "2015",
month = "7",
doi = "10.1116/1.4922588",
language = "English",
volume = "33",
journal = "Journal of Vacuum Science & Technology A",
issn = "1553-1813",
number = "4",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Low temperature temporal and spatial atomic layer deposition of TiO2 films

AU - Aghaee, Morteza

AU - Maydannik, Philipp S.

AU - Johansson, Petri

AU - Kuusipalo, Jurkka

AU - Creatore, Mariadriana

AU - Homola, Tomas

AU - Cameron, David C.

PY - 2015/7

Y1 - 2015/7

N2 - Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80-120 degrees C) were used to grow moisture barrier TiO2 films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 angstrom/cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO2 films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO2, but the deposition time could be reduced using SALD. The TiO2 films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 x 10(-4) g day(-1) m(-2) (38 degrees C and 90% RH) was measured for 20 nm of TiO2 film deposited by plasma-assisted ALD. (C) 2015 American Vacuum Society.

AB - Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80-120 degrees C) were used to grow moisture barrier TiO2 films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 angstrom/cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO2 films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO2, but the deposition time could be reduced using SALD. The TiO2 films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 x 10(-4) g day(-1) m(-2) (38 degrees C and 90% RH) was measured for 20 nm of TiO2 film deposited by plasma-assisted ALD. (C) 2015 American Vacuum Society.

KW - DIOXIDE THIN-FILMS

KW - BINARY REACTION SEQUENCE

KW - TITANIUM-DIOXIDE

KW - BARRIER PROPERTIES

KW - ROOM-TEMPERATURE

KW - PLASMA

KW - AL2O3

KW - ISOPROPOXIDE

KW - PASSIVATION

KW - PRECURSOR

U2 - 10.1116/1.4922588

DO - 10.1116/1.4922588

M3 - Article

VL - 33

JO - Journal of Vacuum Science & Technology A

JF - Journal of Vacuum Science & Technology A

SN - 1553-1813

IS - 4

M1 - 041512

ER -