Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | s. 96 |
Journal | Applied Physics Letters |
Volume | 61 |
Publication status | Published - 1992 |
Publication type | A1 Journal article-refereed |