Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | s. 96 |
| Journal | Applied Physics Letters |
| Volume | 61 |
| Publication status | Published - 1992 |
| Publication type | A1 Journal article-refereed |