Tampere University of Technology

TUTCRIS Research Portal

Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy

Research output: Contribution to journalArticleScientificpeer-review

Standard

Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy. / Zhang, G.; Näppi, J.; Vänttinen, K.; Asonen, H.; Pessa, M.

In: Applied Physics Letters, Vol. 61, 1992, p. s. 96.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhang, G, Näppi, J, Vänttinen, K, Asonen, H & Pessa, M 1992, 'Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy', Applied Physics Letters, vol. 61, pp. s. 96.

APA

Zhang, G., Näppi, J., Vänttinen, K., Asonen, H., & Pessa, M. (1992). Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy. Applied Physics Letters, 61, s. 96.

Vancouver

Zhang G, Näppi J, Vänttinen K, Asonen H, Pessa M. Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy. Applied Physics Letters. 1992;61:s. 96.

Author

Zhang, G. ; Näppi, J. ; Vänttinen, K. ; Asonen, H. ; Pessa, M. / Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy. In: Applied Physics Letters. 1992 ; Vol. 61. pp. s. 96.

Bibtex - Download

@article{9ae55b95a990402ba1a5a040bdc575fd,
title = "Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy",
author = "G. Zhang and J. N{\"a}ppi and K. V{\"a}nttinen and H. Asonen and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1992",
language = "English",
volume = "61",
pages = "s. 96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Low threshold current strained-layer InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy

AU - Zhang, G.

AU - Näppi, J.

AU - Vänttinen, K.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1992

Y1 - 1992

M3 - Article

VL - 61

SP - s. 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -