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Methods for attaining high interband tunneling current in III-Nitrides

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


Original languageEnglish
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Number of pages2
Publication statusPublished - 2012
Publication typeA4 Article in a conference publication
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: 18 Jun 201220 Jun 2012


Conference70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA


III-Nitride based tunneling devices have generated a great deal of interest due to their ability to operate at very high powers/current and elevated temperatures. Additionally, with the increasing interest for making GaN-based photovoltaics, the need for efficient interband tunneling in multi-junction solar cells will be a necessity too. But, to date, due to the nitride's large bandgap and lack of very high bulk doping capabilities, it has proved very difficult to create III-Nitride interband tunnel diodes operating at high current densities. One solution is to use a fairly high concentration of indium in the central tunnel junction to decrease the bandgap and thereby exponentially increase the tunneling probability, while also making use of the spontaneous and piezoelectric polarization charge available in the nitrides to supplement the creation of two quantum wells adjacent the tunnel junction, thereby creating a resonant interband tunneling diode (RITD).

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