Microchip laser Q-switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||3|
|Publication status||Published - 28 May 2015|
|Publication type||A1 Journal article-refereed|
A 1342 nm Nd:YVO4 microchip laser is reported, Q-switched with a dilute nitride GaInNAs/GaAs saturable absorber mirror. The laser produced optical pulses as short as 204 ps with 2.3 MHz repetition rate and 24 mW average output power. In comparison to conventional InP-based saturable absorber mirrors, the advantage of the proposed approach is the availability of excellent Bragg mirror materials that enable high reflectivity and more flexibility in designing the nonlinear parameters owing to the use of lattice matched GaInNAs/GaAs quantum wells.