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Microchip laser Q-switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm

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Details

Original languageEnglish
Pages (from-to)850-852
Number of pages3
JournalElectronics Letters
Volume51
Issue number11
DOIs
Publication statusPublished - 28 May 2015
Publication typeA1 Journal article-refereed

Abstract

A 1342 nm Nd:YVO4 microchip laser is reported, Q-switched with a dilute nitride GaInNAs/GaAs saturable absorber mirror. The laser produced optical pulses as short as 204 ps with 2.3 MHz repetition rate and 24 mW average output power. In comparison to conventional InP-based saturable absorber mirrors, the advantage of the proposed approach is the availability of excellent Bragg mirror materials that enable high reflectivity and more flexibility in designing the nonlinear parameters owing to the use of lattice matched GaInNAs/GaAs quantum wells.

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Field of science, Statistics Finland