Micro-Raman characterization of Germanium thin films evaporated on various substrates
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Details
| Original language | English |
|---|---|
| Pages (from-to) | 492-495 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 88 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2011 |
| Publication type | A1 Journal article-refereed |
Abstract
We perform an extensive micro-Raman analysis of Germanium thin films physically evaporated on several substrates including silicon, silicon oxide and glass. We investigate the dependence of crystal quality on thin film deposition parameters such as substrate temperature and growth rate. We also study the continuous transitional change of the material structure from amorphous to crystalline phases. Ge films obtained by this simple and low cost technique are a viable solution towards the realization of virtual substrates and devices.
ASJC Scopus subject areas
Keywords
- Germanium, Raman characterization, Thin films