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Micro-Raman characterization of Germanium thin films evaporated on various substrates

Research output: Contribution to journalArticleScientificpeer-review


Original languageEnglish
Pages (from-to)492-495
Number of pages4
JournalMicroelectronic Engineering
Issue number4
Publication statusPublished - Apr 2011
Publication typeA1 Journal article-refereed


We perform an extensive micro-Raman analysis of Germanium thin films physically evaporated on several substrates including silicon, silicon oxide and glass. We investigate the dependence of crystal quality on thin film deposition parameters such as substrate temperature and growth rate. We also study the continuous transitional change of the material structure from amorphous to crystalline phases. Ge films obtained by this simple and low cost technique are a viable solution towards the realization of virtual substrates and devices.