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Models for thermal dissociation of silane on a polysilicon surface

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Details

Original languageEnglish
Pages (from-to)215-220
Number of pages6
JournalApplied Physics A Solids and Surfaces
Volume50
Issue number2
DOIs
Publication statusPublished - Feb 1990
Externally publishedYes
Publication typeA1 Journal article-refereed

Abstract

Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.