Tampere University of Technology

TUTCRIS Research Portal

Models for thermal dissociation of silane on a polysilicon surface

Research output: Contribution to journalArticleScientificpeer-review

Standard

Models for thermal dissociation of silane on a polysilicon surface. / Rantala, Tapio T.

In: Applied Physics A Solids and Surfaces, Vol. 50, No. 2, 02.1990, p. 215-220.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Rantala, TT 1990, 'Models for thermal dissociation of silane on a polysilicon surface', Applied Physics A Solids and Surfaces, vol. 50, no. 2, pp. 215-220. https://doi.org/10.1007/BF00343420

APA

Vancouver

Author

Rantala, Tapio T. / Models for thermal dissociation of silane on a polysilicon surface. In: Applied Physics A Solids and Surfaces. 1990 ; Vol. 50, No. 2. pp. 215-220.

Bibtex - Download

@article{2798152d78ba4ec8b9dbb61ffdcfc8e8,
title = "Models for thermal dissociation of silane on a polysilicon surface",
abstract = "Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.",
keywords = "68.55, 82.65",
author = "Rantala, {Tapio T.}",
year = "1990",
month = "2",
doi = "10.1007/BF00343420",
language = "English",
volume = "50",
pages = "215--220",
journal = "Applied Physics A Solids and Surfaces",
issn = "0721-7250",
publisher = "Springer Verlag",
number = "2",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Models for thermal dissociation of silane on a polysilicon surface

AU - Rantala, Tapio T.

PY - 1990/2

Y1 - 1990/2

N2 - Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.

AB - Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.

KW - 68.55

KW - 82.65

U2 - 10.1007/BF00343420

DO - 10.1007/BF00343420

M3 - Article

VL - 50

SP - 215

EP - 220

JO - Applied Physics A Solids and Surfaces

JF - Applied Physics A Solids and Surfaces

SN - 0721-7250

IS - 2

ER -