Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Title of host publication | SPIE conference proceedings |
| Publisher | SPIE |
| Volume | 9349 |
| ISBN (Print) | 9781628414394 |
| DOIs | |
| Publication status | Published - 2015 |
| Publication type | A4 Article in a conference publication |
| Event | Vertical External Cavity Surface Emitting Lasers - , United Kingdom Duration: 1 Jan 2015 → … |
Conference
| Conference | Vertical External Cavity Surface Emitting Lasers |
|---|---|
| Country | United Kingdom |
| Period | 1/01/15 → … |
Abstract
We report the first monolithic GaAs-based vertical external-cavity surface-emitting laser (VECSEL) operating at 1550 nm. The VECSEL is based on a gain mirror which was grown by plasma-assisted molecular beam epitaxy and comprises 8 GaInNAsSb/GaAs quantum wells and an AlAs/GaAs distributed Bragg reflector. When pumped by an 808 nm diode laser, the laser exhibited an output power of 80 mW for a mount temperature of 16 °C.
ASJC Scopus subject areas
Keywords
- dilute nitride, diode-pumped lasers, GaInNAsSb, semiconductor disk lasers, Semiconductor lasers, vertical external cavity surface emitting lasers