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Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationSPIE conference proceedings
PublisherSPIE
Volume9349
ISBN (Print)9781628414394
DOIs
Publication statusPublished - 2015
Publication typeA4 Article in a conference publication
EventVertical External Cavity Surface Emitting Lasers - , United Kingdom
Duration: 1 Jan 2015 → …

Conference

ConferenceVertical External Cavity Surface Emitting Lasers
CountryUnited Kingdom
Period1/01/15 → …

Abstract

We report the first monolithic GaAs-based vertical external-cavity surface-emitting laser (VECSEL) operating at 1550 nm. The VECSEL is based on a gain mirror which was grown by plasma-assisted molecular beam epitaxy and comprises 8 GaInNAsSb/GaAs quantum wells and an AlAs/GaAs distributed Bragg reflector. When pumped by an 808 nm diode laser, the laser exhibited an output power of 80 mW for a mount temperature of 16 °C.

Keywords

  • dilute nitride, diode-pumped lasers, GaInNAsSb, semiconductor disk lasers, Semiconductor lasers, vertical external cavity surface emitting lasers

Publication forum classification

Field of science, Statistics Finland