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Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


Original languageEnglish
Title of host publication2019 IEEE European Space Power Conference
Publication statusAccepted/In press - 2019
Publication typeA4 Article in a conference publication
EventEuropean Space Power Conference 2019 - Palais des Congres d'Antibes, Juan-Les-Pins, France
Duration: 30 Sep 20194 Oct 2019


ConferenceEuropean Space Power Conference 2019
Abbreviated titleESPC2019
Internet address


Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.


  • Solar cell, dilute nitride semiconductors, III-V semiconductor

Publication forum classification

Field of science, Statistics Finland