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Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells

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Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells. / Isoaho, Riku; Aho, Arto; Tukiainen, Antti; Aho, Timo; Raappana, Marianna; Salminen, Turkka; Reuna, Jarno ; Guina, Mircea.

2019 European Space Power Conference (ESPC). IEEE, 2019.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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@inproceedings{affe73d720d84d3b9bdf9b49bccf12b7,
title = "Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells",
abstract = "Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2{\%}. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33{\%}. Further improvements are discussed towards achieving the full potential of the 6-junction design.",
keywords = "Solar cell, dilute nitride semiconductors, III-V semiconductor",
author = "Riku Isoaho and Arto Aho and Antti Tukiainen and Timo Aho and Marianna Raappana and Turkka Salminen and Jarno Reuna and Mircea Guina",
year = "2019",
doi = "10.1109/ESPC47532.2019.9049263",
language = "English",
isbn = "978-1-7281-2127-7",
booktitle = "2019 European Space Power Conference (ESPC)",
publisher = "IEEE",

}

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TY - GEN

T1 - Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells

AU - Isoaho, Riku

AU - Aho, Arto

AU - Tukiainen, Antti

AU - Aho, Timo

AU - Raappana, Marianna

AU - Salminen, Turkka

AU - Reuna, Jarno

AU - Guina, Mircea

PY - 2019

Y1 - 2019

N2 - Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.

AB - Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.

KW - Solar cell

KW - dilute nitride semiconductors

KW - III-V semiconductor

U2 - 10.1109/ESPC47532.2019.9049263

DO - 10.1109/ESPC47532.2019.9049263

M3 - Conference contribution

SN - 978-1-7281-2127-7

BT - 2019 European Space Power Conference (ESPC)

PB - IEEE

ER -