Near-surface defect profiling with slow positrons: Argon-sputtered Al(110)
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||3|
|Journal||Physical Review B|
|Publication status||Published - 1 Jan 1985|
|Publication type||Not Eligible|
We report on slow-positron measurements of atomic defect distribution near a solid surface. Defects are produced by argon-ion bombardment of an Al(110) surface in ultrahigh vacuum. Defect profiles have a typical width of 1525 A and contain a broader tail extending to 50100 A. The defect density at the outermost atomic layers saturates at high argon fluences to a few atomic percent, depending on sputtering conditions. Defect production rate at >1 keV Ar+ energies is typically 15 vacancy-interstitial pairs per incident ion. Molecular-dynamics simulations of the collision cascade predict similar defect distributions.