Tampere University of Technology

TUTCRIS Research Portal

Near-surface defect profiling with slow positrons: Argon-sputtered Al(110)

Research output: Contribution to journalArticleScientificpeer-review


Original languageEnglish
Pages (from-to)7561-7563
Number of pages3
JournalPhysical Review B
Issue number11
Publication statusPublished - 1 Jan 1985
Externally publishedYes
Publication typeNot Eligible


We report on slow-positron measurements of atomic defect distribution near a solid surface. Defects are produced by argon-ion bombardment of an Al(110) surface in ultrahigh vacuum. Defect profiles have a typical width of 1525 A and contain a broader tail extending to 50100 A. The defect density at the outermost atomic layers saturates at high argon fluences to a few atomic percent, depending on sputtering conditions. Defect production rate at >1 keV Ar+ energies is typically 15 vacancy-interstitial pairs per incident ion. Molecular-dynamics simulations of the collision cascade predict similar defect distributions.