Near-surface defect profiling with slow positrons: Argon-sputtered Al(110)
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Details
| Original language | English |
|---|---|
| Pages (from-to) | 7561-7563 |
| Number of pages | 3 |
| Journal | Physical Review B |
| Volume | 32 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1 Jan 1985 |
| Externally published | Yes |
| Publication type | Not Eligible |
Abstract
We report on slow-positron measurements of atomic defect distribution near a solid surface. Defects are produced by argon-ion bombardment of an Al(110) surface in ultrahigh vacuum. Defect profiles have a typical width of 1525 A and contain a broader tail extending to 50100 A. The defect density at the outermost atomic layers saturates at high argon fluences to a few atomic percent, depending on sputtering conditions. Defect production rate at >1 keV Ar+ energies is typically 15 vacancy-interstitial pairs per incident ion. Molecular-dynamics simulations of the collision cascade predict similar defect distributions.